“Engineers with significant practical experience in building MOSFETs in SiC and GaN are Briefly supply and there are significant differences between a SiC fab as well as a silicon fab.” Identification of stacking faults in silicon carbide by polarization-settled second harmonic generation microscopy. Silicon, silica, and silicone are three different https://www.quora.com/profile/Trevor-Flatcher-2/Exploring-the-High-Temperature-Performance-of-Silicon-Carbide-Special-Ceramics-https-www-macrocosmmaterial-com-news-E